华瑞微HRT60N08D N沟道 60V80A 场效应管MOS管

华瑞微HRT60N08D

Description
N-Channel Power MOSFET designed by HR-Micro
Semiconductor Company,according to the advanced Trench
Technology. This devices provide an excellent gate charge and
RDS(on)
, which leads to extremely communication and conduction
losses. So it is very suitable for AC/DC power conversion, load
switch and industrial power applications.

Features
⚫ Low FOM RDS(on)×Qgd
⚫ ** avalanche tested
⚫ Easy to use/drive
⚫ RoHS compliant

Applications
⚫ DC/DC Converter
⚫ Battery Protection Charge/Discharge
⚫ Load Switch
⚫ Synchronous Rectification

Key Performance Parameters
Parameter Value Unit
VDS@ Tc=25℃ 60 V
RDS(on),max@10V 8 mΩ
Qg,typ 76 nC
ID@Tc=25℃ 80 A
ID,pulse 320 A
EAS
1) 244 mJ

Device Marking and Package Information
Device Package Marking
HRT60N08B TO-263 60N08B
HRT60N08D TO-252 60N08D
HRT60N08U TO-251 60N08U
HRT60N08P TO-220 60N08P

Absolute Maximum Ratings TA = 25ºC, unless otherwise noted
Parameter Symbol Values Unit
Drain-Source Voltage(VGS=0V) VDS 60 V
Continuous Drain Current2)
TC = 25ºC
ID
80
A
TC = 100ºC 51
Pulsed Drain Current3)
ID,pulse 320 A
Gate-Source Voltage VGSS ±20 V
Single Pulse Avalanche Energy1) EAS 244 mJ
Power Dissipation PD 83 W
Operating Junction and Storage Temperature Range TJ
, Tstg -55~+150 ºC


Electrical Characteristics TJ = 25ºC, unless otherwise noted
Parameter Symbol Test Conditions
Value
Unit
Min. Typ. Max.
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V
Zero Gate Voltage Drain Current IDSS
VDS = 60V
VGS = 0V, TJ = 25ºC
-- -- 1
μA
VDS = 60V
VGS = 0V, TJ = 125ºC -- -- 100
Gate-Source Leakage Current IGSS VGS = ±20V -- -- ±100 nA
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 2.8 4 V
Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 20A -- 6.5 8 mΩ
Gate Resistance RG f = 1.0MHz open drain -- 1.6 -- Ω
Dynamic Characteristics
Input Capacitance Ciss
VGS = 0V, VDS = 30V
f = 1.0MHz
-- 4009 --
Output Capacitance Coss -- 243 -- pF
Reverse Transfer Capacitance Crss -- 201 --
Total Gate Charge Qg
VDS = 30V, ID = 20A
VGS = 10V
-- 76 --
Gate-Source Charge Qgs -- 17 -- nC
Gate-Drain Charge Qgd -- 19 --
Gate Plateau Voltage VPlateau -- 4.3 -- V
Turn-on Delay Time td(on)
VDS = 30V, VGS =10V
RG = 3Ω, ID = 20A
-- 19 --
ns
Turn-on Rise Time t
r
-- 42 --
Turn-off Delay Time td(off) -- 48 --
Turn-off Fall Time t
f
-- 29 --
Drain-Source Body Diode Characteristics
Body Diode Forward Voltage VSD
TJ = 25ºC, ISD = 20A
VGS = 0V -- -- 1.2 V
Continuous Diode Forward Current IS
-- -- 80 A
Reverse Recovery Time t
rr
IF = 20A, diF
/dt = 100A/μs
-- 28 -- ns
Reverse Recovery Charge Qrr -- 52 -- nC